ബാന്റ് ഗ്യാപ്

ഇംഗ്ലീഷ് വിലാസം

https://ml.wikipedia.org/wiki/Band_gap

Showing how electronic band structure comes about by the hypothetical example of a large number of carbon atoms being brought together to form a diamond crystal. The graph (right) shows the energy levels as a function of the spacing between atoms. When the atoms are far apart (right side of graph) each atom has valence atomic orbitals p and s which have the same energy. However when the atoms come closer together their orbitals begin to overlap. Due to the Pauli Exclusion Principle each atomic orbital splits into N molecular orbitals each with a different energy, where N is the number of atoms in the crystal. Since N is such a large number, adjacent orbitals are extremely close together in energy so the orbitals can be considered a continuous energy band. a is the atomic spacing in an actual crystal of diamond. At that spacing the orbitals form two bands, called the valence and conduction bands, with a 5.5 eV band gap between them. Very few electrons have the energy to surmount this wide energy gap and become conduction electrons, so diamond is an insulator.

സോളിഡ് സ്റ്റേറ്റ് ഫിസിക്സിൽ ബാന്റ് ഗ്യാപ് (band gap, energy gap, അല്ലെങ്കിൽ bandgap) എന്നെല്ലാം അറിയപ്പെടുന്നത് ഒരു ഖരത്തിൽ ഇലക്ടോണുകൾക്ക് സ്ഥിതി ചെയ്യാൻ സാധ്യമല്ലാത്ത ഒരു ഊർജ്ജ മേഖലയെയാണ്.

സെമികണ്ടക്ടർ ഫിസിക്സിൽ[തിരുത്തുക]

Semiconductor band structure.

ബാന്റ് ഗ്യാപ്പുകളുടെ പട്ടിക[തിരുത്തുക]

Group	Material	Symbol	Band gap (eV) @ 302K	Reference
III-V	Aluminium nitride	AlN	6.0	^[1]
IV	Diamond	C	5.5	^[2]
IV	Silicon	Si	1.14
IV	Germanium	Ge	0.67	^[3]
III–V	Gallium nitride	GaN	3.4
III–V	Gallium phosphide	GaP	2.26
III–V	Gallium arsenide	GaAs	1.43
IV–V	Silicon nitride	Si₃N₄	5
IV–VI	Lead sulfide	PbS	0.37
IV–VI	Silicon dioxide	SiO₂	9	^[4]
Copper oxide	Cu₂O	2.1	^[5]

പദാർത്ഥങ്ങൾ[തിരുത്തുക]

ഇലക്ട്രോണിൿ വിഷയങ്ങളുടെ പട്ടിക[തിരുത്തുക]

ഇവയും കാണുക[തിരുത്തുക]

അവലംബം[തിരുത്തുക]

↑ Feneberg, Martin; Leute, Robert A. R.; Neuschl, Benjamin; Thonke, Klaus; Bickermann, Matthias (2010). "High-excitation and high-resolution photoluminescence spectra of bulk AlN". Physical Review B. 82 (7). doi:10.1103/PhysRevB.82.075208. ISSN 1098-0121.
↑ Kittel, Charles. Introduction to Solid State Physics, 7th Edition. Wiley.
↑ Streetman, Ben G.; Sanjay Banerjee (2000). Solid State electronic Devices (5th പതിപ്പ്.). New Jersey: Prentice Hall. പുറം. 524. ISBN 0-13-025538-6.
↑ Vella, E.; Messina, F.; Cannas, M.; Boscaino, R. (2011). "Unraveling exciton dynamics in amorphous silicon dioxide: Interpretation of the optical features from 8 to 11 eV". Physical Review B. 83 (17): 174201. Bibcode:2011PhRvB..83q4201V. doi:10.1103/PhysRevB.83.174201.
↑ Baumeister, P.W. (1961). "Optical Absorption of Cuprous Oxide". Physical Review. 121 (2): 359. Bibcode:1961PhRv..121..359B. doi:10.1103/PhysRev.121.359.

പുറത്തേക്കുള്ള കണ്ണികൾ[തിരുത്തുക]

Direct Band Gap Energy Calculator Archived 2008-05-15 at the Wayback Machine.
Moriarty, Philip. "Energy Gap (and what makes glass transparent?)". Sixty Symbols. Brady Haran for the University of Nottingham.

[FenebergLeute2010-1] Feneberg, Martin; Leute, Robert A. R.; Neuschl, Benjamin; Thonke, Klaus; Bickermann, Matthias (2010). "High-excitation and high-resolution photoluminescence spectra of bulk AlN". Physical Review B. 82 (7). doi:10.1103/PhysRevB.82.075208. ISSN 1098-0121.

[Kittel7-2] Kittel, Charles. Introduction to Solid State Physics, 7th Edition. Wiley.

[Streetman-3] Streetman, Ben G.; Sanjay Banerjee (2000). Solid State electronic Devices (5th പതിപ്പ്.). New Jersey: Prentice Hall. പുറം. 524. ISBN 0-13-025538-6.

[Vella-4] Vella, E.; Messina, F.; Cannas, M.; Boscaino, R. (2011). "Unraveling exciton dynamics in amorphous silicon dioxide: Interpretation of the optical features from 8 to 11 eV". Physical Review B. 83 (17): 174201. Bibcode:2011PhRvB..83q4201V. doi:10.1103/PhysRevB.83.174201.

[Baumeister-5] Baumeister, P.W. (1961). "Optical Absorption of Cuprous Oxide". Physical Review. 121 (2): 359. Bibcode:1961PhRv..121..359B. doi:10.1103/PhysRev.121.359.

[1]

[2]

[3]

[4]

[5]